A fluoro-ethoxysilane-based stiction-free release process for submicron gap MEMS

被引:0
作者
Parvais, B [1 ]
Pallandre, A [1 ]
Jonas, AM [1 ]
Raskin, JP [1 ]
机构
[1] Catholic Univ Louvain, CERMIN, Microwave Lab, B-1348 Louvain, Belgium
来源
NANOTECH 2003, VOL 1 | 2003年
关键词
MEMS; SAM; stiction; release process; hydrophobization;
D O I
暂无
中图分类号
R318 [生物医学工程];
学科分类号
0831 ;
摘要
Nowadays, stiction remains one of the biggest reliability problems in the fabrication of micro- electromechanical systems (MEMS), especially when a small gap is used. To avoid the adhesion, a Self-Assembled Monolayer (SAM) could be coated. Main research in that field focuses on aliphatic chloro-silanes. We developed a novel wet-release CMOS compatible process for the fabrication of surface-micromachined beams using a perfluorated SAM. Uniform 9 Angstrom thick monolayers were observed. A static contact angle of 117degrees up to 300degreesC was measured. Furthermore, a complete 1 mum thick (gap 0.5 mum) polysilicon RF MEMS capacitor with aluminium interconnects realized with this process demonstrated the CMOS compatibility.
引用
收藏
页码:522 / 525
页数:4
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