Electronic properties of graphene/hexagonal-boron-nitride moire superlattice

被引:200
作者
Moon, Pilkyung [1 ]
Koshino, Mikito [2 ]
机构
[1] New York Univ Shanghai, Shanghai 200120, Peoples R China
[2] Tohoku Univ, Dept Phys, Sendai, Miyagi 9808578, Japan
来源
PHYSICAL REVIEW B | 2014年 / 90卷 / 15期
关键词
GRAPHENE SUPERLATTICES; HALL CONDUCTANCE; CARBON NANOTUBES; BLOCH ELECTRONS; DIRAC FERMIONS; GRAPHITE; TRANSPORT; STATES;
D O I
10.1103/PhysRevB.90.155406
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We theoretically investigate the electronic structures of moire superlattices arising in monolayer/bilayer graphene stacked on hexagonal boron nitride (hBN) in the presence and absence of magnetic field. We develop an effective continuum model from a microscopic tight-binding lattice Hamiltonian and calculate the electronic structures of graphene-hBN systems with different rotation angles. Using the effective model, we explain the characteristic band properties such as the gap opening at the corners of the superlattice Brillouin zone (mini-Dirac point). We also investigate the energy spectrum and quantum Hall effect of graphene-hBN systems in uniform magnetic field and demonstrate the evolution of the fractal spectrum as a function of the magnetic field. The spectrum generally splits in the valley degrees of freedom (K and K') due to the lack of the inversion symmetry, and the valley splitting is more significant in bilayer graphene on hBN than in monolayer graphene on hBN because of the stronger inversion-symmetry breaking in bilayer.
引用
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页数:12
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