Ink-Jet Printing of a Single-Walled Carbon Nanotube Thin Film Transistor

被引：25

作者：

Okimoto, Haruya ^{[1
]}

Takenobu, Taishi ^{[1
]}

Yanagi, Kazuhiro ^{[2
,3
]}

Miyata, Yasumitsu ^{[2
]}

Kataura, Hiromichi ^{[2
,3
]}

Asano, Takeshi ^{[4
]}

Iwasa, Yoshihiro ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Natl Inst Adv Ind Sci & Technol, Nanotechnol Res Inst, Tsukuba, Ibaraki 3058562, Japan

[3] Japan Sci & Technol Agcy, CREST, Saitama 3300012, Japan

[4] Brother Ind Ltd, Nagoya, Aichi 4678561, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 06期

关键词：

FIELD-EFFECT TRANSISTORS; ELECTRONIC-STRUCTURE; NETWORKS; TRANSPARENT; DISPLAYS; MOBILITY; DROPLET;

D O I：

10.1143/JJAP.48.06FF03

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) were fabricated using ink-jet printing. We printed both thick source-drain electrodes and thin active semiconducting films using NN-dimethylformamide (DMF)-based SWCNT dispersion. Despite the presence of metallic SWCNTs, the device exhibited field-effect behavior, with an effective mobility of 2.99 cm(2) V(-1) s(-1) and an on/off current ratio of up to 75. The method used in this study is promising for the fabrication of large-scale high-performance SWCNT-TFTs. (C) 2009 The Japan Society of Applied Physics

引用

页码：06FF031 / 06FF034

页数：4

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