Ferroelectric memory in La substituted Bi4Ti3O12 thin films

被引：0

作者：

Melgarejo, RE ^{[1
]}

Tomar, MS ^{[1
]}

机构：

[1] Univ Puerto Rico, Dept Phys, Mayaguez, PR 00681 USA

来源：

FERROELECTRIC THIN FILMS XII | 2004年 / 784卷

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中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The recent demonstration of large ferroelectric memory in rare earth substituted Bi4Ti3O12 attracted a lot of research interest in this material. Bi4-xLaxTi3O12 was synthesized by sol-gel route for different compositions: x = 0.00, 0.46, 0.56, 0.75, 0.95 and thin films were deposited by spin coating on Pt (Pt/TiO2/SiO2/Si) substrate. The post annealed films at 700degreesC were studied for their structural studies using x-ray diffraction and Raman spectroscopy. The prominent effect of La substitution is observed in low frequency Raman modes. X-ray diffraction and Raman studies show that the film growth was c-axis suppressed. Using improved contacts to Pt substrate, ferroelectric polarization P-r = 51 muC/cm(2) has been achieved for 0.63 mum thick film of composition: x = 0.56 (BLT56) without appreciable fatigue.

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页码：219 / 224

页数：6

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