Condition monitoring of power module using S-parameters, TDR, and TDT

被引:3
|
作者
Pascal, Y. [1 ]
Daschner, F. [2 ]
Liserre, M. [3 ]
Hoeft, M. [2 ]
机构
[1] Fraunhofer Inst Silicon Technol ISIT, Fraunhoferstr 1, D-25524 Itzehoe, Germany
[2] Univ Kiel, Chair Microwave Engn, Kiel, Germany
[3] Univ Kiel, Chair Power Elect, Kiel, Germany
关键词
Condition monitoring; Power module; Power electronics; S; -parameters; TDR; TDT; Time domain reflectometry; Time domain transmission; Reflectometry; Packaging;
D O I
10.1016/j.microrel.2022.114615
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Condition monitoring of power electronics is gaining interest as power electronics expends to mission-critical applications. This paper offers a preliminary experimental study of the viability of using S-parameters and time-domain reflectometry measurements to monitor the degradation of a power module. To this end, mea-surements were performed on a standard high current power module which was artificially aged by cutting wire bonds one by one. The study demonstrates a clear trend in the evolution of measured parameters, and thereby the possibility to monitor the power module degradation under the specific test conditions. This opens a new con-dition monitoring technology for power electronics systems.
引用
收藏
页数:6
相关论文
共 50 条
  • [1] Extraction of frequency dependent transmission line parameters using TDR/TDT measurements
    Swaminathan, M
    Pannala, S
    Roy, T
    IMTC/2001: PROCEEDINGS OF THE 18TH IEEE INSTRUMENTATION AND MEASUREMENT TECHNOLOGY CONFERENCE, VOLS 1-3: REDISCOVERING MEASUREMENT IN THE AGE OF INFORMATICS, 2001, : 1726 - 1730
  • [2] Condition Monitoring for IGBT Power Module
    Xu, Shengyou
    Wang, Wei
    Yang, Xin
    Qiu, Guoqing
    Duan, Zhaolie
    PROCEEDINGS OF THE 4TH INTERNATIONAL SYMPOSIUM ON NEW ENERGY AND ELECTRICAL TECHNOLOGY, ISNEET 2023, 2024, 1255 : 228 - 233
  • [3] TDR and S-parameters Performance Requirements for Fault Isolation and Serial Data Applications
    Smolyansky, Dima
    2007 70TH ARFTG MICROWAVE MEASUREMENT CONFERENCE (ARFTG), 2007,
  • [4] ANALYSIS OF AN FET AMPLIFIER USING POWER-DEPENDENT S-PARAMETERS
    UMEDA, H
    NAKAJIMA, M
    IEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMS, 1988, 135 (04): : 162 - 166
  • [5] Extraction of Packaged GaN Power Transistors Parasitics Using S-Parameters
    Pace, L.
    Defrance, N.
    Videt, A.
    Idir, N.
    De Jaeger, J-C.
    Avramovic, V.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (06) : 2583 - 2588
  • [6] METHOD OF OPTIMUM OSCILLATOR DESIGN USING POWER-DEPENDENT S-PARAMETERS
    UMEDA, H
    IEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMS, 1991, 138 (04): : 533 - 540
  • [7] Condition Monitoring Power Module Solder Fatigue Using Inverter Harmonic Identification
    Xiang, Dawei
    Ran, Li
    Tavner, Peter
    Yang, Shaoyong
    Bryant, Angus
    Mawby, Philip
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2012, 27 (01) : 235 - 247
  • [8] Condition Monitoring in a Power Module Using On-State Resistance and Case Temperature
    Lai, Wei
    Zhao, Yuanpei
    Chen, Minyou
    Wang, Yueyue
    Ding, Xueni
    Xu, Shengyou
    Pan, Liangming
    IEEE ACCESS, 2018, 6 : 67108 - 67117
  • [9] SYMMETRICAL COMBINER ANALYSIS USING S-PARAMETERS
    KINMAN, DM
    WHITE, DJ
    AFENDYKIW, M
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (03) : 268 - 277
  • [10] Wireless Monitoring of S-Parameters Measurement using a Nano-VNA for Biomedical Applications
    Elmiladi, Lisa K.
    Hora, Kenneth Y.
    Aaen, Peter H.
    Elsherbeni, Atef Z.
    2024 INTERNATIONAL APPLIED COMPUTATIONAL ELECTROMAGNETICS SOCIETY SYMPOSIUM, ACES 2024, 2024,