Advanced SPICE modeling of large power IGBT modules

被引：19
作者：
Azar, R [1 ]
Udrea, F
De Silva, M
Amaratunga, G
Ng, WT
Dawson, F
Findlay, W
Waind, P
机构：
[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
[2] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada
[3] Dynex Semicond, Lincoln LN6 3LF, England
来源：
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS | 2004年 / 40卷 / 03期
基金：
英国工程与自然科学研究理事会;
关键词：
insulated gate bipolar transistor (IGBT) model; PSPICE; trench IGBT simulation;
D O I：
10.1109/TIA.2004.827456
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An enhanced insulated gate bipolar transistor (IGBT) model based on the Kraus model with new derivations based on an extra parameter accounting for p-i-n injection was developed to allow simulation of both trench and DMOS IGBT structures. Temperature dependence was also implemented in the model. The model was validated against steady-state and transient measurements done on an 800-A 1.7-kV Dynex IGBT module at 25degreesC and 125degreesC. The Spice model has also shown excellent agreement with mixed mode MEDICI simulations. The Spice model also takes into account for the first time the parasitic thyristor effect allowing the dc and dynamic temperature-dependent latchup modeling of power modules as well as their temperature-dependent safe operating area.
引用
收藏
页码：710 / 716
页数：7
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