SET Tolerance of 65 nm CMOS Majority Voters: A Comparative Study

被引：27

作者：

Danilov, Igor A. ^{[1
]}

Gorbunov, Maxim S. ^{[1
,2
]}

Antonov, Andrey A. ^{[1
]}

机构：

[1] Russian Acad Sci, Sci Res Inst Syst Anal, Moscow 117218, Russia

[2] Natl Res Nucl Univ, Moscow Engn Phys Inst, Nano & Microelect Dept, Moscow, Russia

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2014年 / 61卷 / 04期

关键词：

CMOS; critical charge; DICE; heavy ions; majority voter; single-event transient (SET); triple-modular redundancy (TMR); CHARGE;

D O I：

10.1109/TNS.2014.2311297

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We study the design of different majority voters based on a commercial 65 nm CMOS technology, propose the test system and discuss the experimental results of heavy ion irradiation campaign and the proposed relative efficiency criterion for choosing the voter for a given TMR strategy.

引用

页码：1597 / 1602

页数：6

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