Laser-induced crystallization behavior of the sputtered Ge2Sb2Te5 film

被引：0

作者：

Liu, B ^{[1
]}

Ruan, H ^{[1
]}

Gan, FX ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China

来源：

JOURNAL OF INORGANIC MATERIALS | 2002年 / 17卷 / 03期

关键词：

Ge2Sb2Te5; laser-induced phase-change; XRD; FCC;

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The crystallization behavior of sputtered Ge2Sb2Te5 films initialized by initializer unit was studied by using XRD. It is indicated that only the amorphous phase to FCC phase transformation occurs during laser annealing of the normal phase-change structure, which is benefit for raising the phase-change optical disc's signal-to-noise ratio. The phase transformation from FCC to HCP doesn't occur, which occurs during the heat-induced phase-change process. The initialization power and velocity affect the Ge2Sb2Te5 film's crystallization fraction.

引用

页码：637 / 640

页数：4

共 10 条

[1] Initialization characteristics and their effects on the erasability of phase change optical disks using transmission electron microscopy [J].

Chen, HW ;

Hsieh, TE ;

Liu, JR ;

Shieh, HPD .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (3B) :1691-1697

[2] Kinetic crystallization behavior of phase-change medium [J].

Chiang, DY ;

Jeng, TR ;

Huang, DR ;

Chang, YY ;

Liu, CP .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (3B) :1649-1651

[3] RAPID REVERSIBLE LIGHT-INDUCED CRYSTALLIZATION OF AMORPHOUS SEMICONDUCTORS [J].

FEINLEIB, J ;

DENEUFVILLE, J ;

MOSS, SC ;

OVSHINSKY, SR .

APPLIED PHYSICS LETTERS, 1971, 18 (06) :254-+

[4] Phase change in Ge2Sb2Te5 films investigated by coherent phonon spectroscopy [J].

Först, M ;

Dekorsy, T ;

Trappe, C ;

Laurenzis, M ;

Kurz, H ;

Béchevet, B .

APPLIED PHYSICS LETTERS, 2000, 77 (13) :1964-1966

[5]

Junji T, 1999, JPN J APPL PHYS, V38, pL322

[6] Crystallization of germanium-antimony-tellurium amorphous thin film sandwiched between various dielectric protective films [J].

Ohshima, N .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (11) :8357-8363

[7]

PRAMOD KK, 2000, J APPL PHYS, V88, P3926

[8]

TAE HJ, 1999, J APPL PHYS, V86, P774

[9] Atomic force microscopy study of laser induced phase transitions in Ge2Sb2Te5 [J].

Weidenhof, V ;

Friedrich, I ;

Ziegler, S ;

Wuttig, M .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (10) :5879-5887

[10] Structure of laser-crystallized Ge2Sb2+xTe5 sputtered thin films for use in optical memory [J].

Yamada, N ;

Matsunaga, T .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (12) :7020-7028

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