Lattice contraction with boron doping in fully strained SiGe epitaxial layers

被引：7

作者：

Shin, Keun Wook ^{[1
,4
]}

Song, Sukchan ^{[1
]}

Kim, Hyun-Woo ^{[1
]}

Lee, Gun-Do ^{[1
,2
,3
]}

Yoon, Euijoon ^{[1
,2
,3
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151742, South Korea

[2] Seoul Natl Univ, Res Inst Adv Mat, Seoul 151742, South Korea

[3] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea

[4] Samsung Adv Inst Technol, Suwon 16678, Gyeonggi, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2018年 / 57卷 / 06期

基金：

新加坡国家研究基金会;

关键词：

DOPED SILICON; COMPENSATION; SI1-XGEX; HETEROSTRUCTURES; PHOSPHORUS; DIFFUSION; ALLOYS; GE;

D O I：

10.7567/JJAP.57.065504

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Changes in lattice constants of epitaxial SiGe layers by boron (B) doping were studied by using high resolution X-ray diffraction (HRXRD) by using SiGe: B with Ge and B concentrations in the range of 11-23% and (1.5-4.2) x 10(19) cm(-3), respectively. The lattice contraction coefficient (beta) of B in SiGe was measured to be (9.6 +/- 0.6) x 10(-24) cm(3), which was approximately twice as large as that of B in Si. The ab initio calculation of beta, 9.35 x 10(-24) cm(3), was in excellent agreement with the experiment. From the ab initio calculation, it is found that the large lattice contraction is due to the favorability of Si-B bond than Si-Ge bond. (C) 2018 The Japan Society of Applied Physics

引用

页数：4

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