共 10 条
Development of heterojunction diode-type gamma ray detectors based on epitaxially grown thick CdTe on n+-Si substrates
被引:20
作者:

Yasuda, K.
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Nagoya Inst Technol, Grad Sch Engn, Nagoya, Aichi 4668555, Japan Nagoya Inst Technol, Grad Sch Engn, Nagoya, Aichi 4668555, Japan

Niraula, M.
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Nagoya Inst Technol, Grad Sch Engn, Nagoya, Aichi 4668555, Japan Nagoya Inst Technol, Grad Sch Engn, Nagoya, Aichi 4668555, Japan

Noda, K.
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Nagoya Inst Technol, Grad Sch Engn, Nagoya, Aichi 4668555, Japan Nagoya Inst Technol, Grad Sch Engn, Nagoya, Aichi 4668555, Japan

Yokota, M.
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Ohashi, H.
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Nagoya Inst Technol, Grad Sch Engn, Nagoya, Aichi 4668555, Japan Nagoya Inst Technol, Grad Sch Engn, Nagoya, Aichi 4668555, Japan

Nakamura, K.
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Nagoya Inst Technol, Grad Sch Engn, Nagoya, Aichi 4668555, Japan Nagoya Inst Technol, Grad Sch Engn, Nagoya, Aichi 4668555, Japan

Omura, M.
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Shingu, I.
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Nagoya Inst Technol, Grad Sch Engn, Nagoya, Aichi 4668555, Japan Nagoya Inst Technol, Grad Sch Engn, Nagoya, Aichi 4668555, Japan

Minoura, S.
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Nagoya Inst Technol, Grad Sch Engn, Nagoya, Aichi 4668555, Japan Nagoya Inst Technol, Grad Sch Engn, Nagoya, Aichi 4668555, Japan

Tanaka, R.
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Agata, Y.
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Nagoya Inst Technol, Grad Sch Engn, Nagoya, Aichi 4668555, Japan Nagoya Inst Technol, Grad Sch Engn, Nagoya, Aichi 4668555, Japan
机构:
[1] Nagoya Inst Technol, Grad Sch Engn, Nagoya, Aichi 4668555, Japan
关键词:
cadmium telluride (CdTe) epitaxial layers;
energy resolution;
gamma ray detector;
heterojunction diode;
metal-organic vapor phase epitaxy (MOVPE);
D O I:
10.1109/LED.2006.884723
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
Room temperature nuclear radiation detectors with energy discrimination capability developed by growing thick cadmium telluride (CdTe) epitaxial layers directly on n(+)-Si substrates in a metal-organic vapor phase epitaxy system is reported for the first time. The CdTe/n(+)-Si heterojunction diode detector exhibited good rectification and charge collection properties. The reverse leakage currents were typically 1 x 10(-7) to 5 x 10(-7) A/cm(2) at 50-V bias. The detector clearly demonstrated its energy discrimination capability by resolving gamma peak from the Am-241 radioisotope during radiation detection test at room temperature.
引用
收藏
页码:890 / 892
页数:3
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