Development of heterojunction diode-type gamma ray detectors based on epitaxially grown thick CdTe on n+-Si substrates

被引:20
作者
Yasuda, K. [1 ]
Niraula, M. [1 ]
Noda, K. [1 ]
Yokota, M. [1 ]
Ohashi, H. [1 ]
Nakamura, K. [1 ]
Omura, M. [1 ]
Shingu, I. [1 ]
Minoura, S. [1 ]
Tanaka, R. [1 ]
Agata, Y. [1 ]
机构
[1] Nagoya Inst Technol, Grad Sch Engn, Nagoya, Aichi 4668555, Japan
关键词
cadmium telluride (CdTe) epitaxial layers; energy resolution; gamma ray detector; heterojunction diode; metal-organic vapor phase epitaxy (MOVPE);
D O I
10.1109/LED.2006.884723
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Room temperature nuclear radiation detectors with energy discrimination capability developed by growing thick cadmium telluride (CdTe) epitaxial layers directly on n(+)-Si substrates in a metal-organic vapor phase epitaxy system is reported for the first time. The CdTe/n(+)-Si heterojunction diode detector exhibited good rectification and charge collection properties. The reverse leakage currents were typically 1 x 10(-7) to 5 x 10(-7) A/cm(2) at 50-V bias. The detector clearly demonstrated its energy discrimination capability by resolving gamma peak from the Am-241 radioisotope during radiation detection test at room temperature.
引用
收藏
页码:890 / 892
页数:3
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