Structure and high dielectric permittivity of Li0.01M0.05Ni0.94O (M = V and W) ceramics

被引：16

作者：

Chen, Guo-Ju ^{[2
]}

Hsiao, Yu-Jen ^{[1
]}

Chang, Yee-Shin ^{[3
]}

Chai, Yin-Lai ^{[4
]}

机构：

[1] Natl Nano Device Labs, Tainan 741, Taiwan

[2] I Shou Univ, Dept Mat Sci & Engn, Kaohsiung 840, Taiwan

[3] Natl Formosa Univ, Inst Electroopt & Mat Sci, Yunlin 632, Taiwan

[4] Dahan Inst Technol, Dept Environm Resources Management, Hualien 971, Taiwan

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2009年 / 474卷 / 1-2期

关键词：

Polarization; Dielectric; NiO; Solid-state reaction; PEROVSKITE CERAMICS; NIO; RELAXATION; PROPERTY; ROUTE; TA; LI;

D O I：

10.1016/j.jallcom.2008.06.053

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Microstructure and dielectric behavior of Li0.01M0.05Ni0.94O (M=V and W) ceramics were studied. The contents of V2O5 and WO3 were mainly dispersed into the grain boundaries and existed as the Ni3V2O8 and NiWO4 phase. The compounds exhibit a negative temperature coefficient of resistance (NTCR) behavior. The dc conductivity of activation energy for the compositions with M = V and W are 0.274 and 0.229 eV. The dielectric constant was decreased toward higher frequencies at room temperature. It is the barrier layer capacitors (BLCs) mechanism and the existing large polarization that can cause the high dielectric constant in Li0.01M0.05Ni0.94O (M = V and W) ceramics. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：237 / 240

页数：4

共 20 条

[11] Dielectric relaxation property and barrier layer formation in CrNbO4 oxides [J].