Effects of interactions and disorder on the compressibility of two-dimensional electron and hole systems

被引：4
|
作者：
Galaktionov, E. A.
Allison, G. D.
Fogler, M. M.
Savchenko, A. K.
Safonov, S. S.
Simmons, M. Y.
Ritchie, D. A.
机构：
[1] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England
[2] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
[3] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2006年 / 34卷 / 1-2期
关键词：
compressibility; metal-insulator transition; capacitance; DENSITY-OF-STATES; GAS;
D O I：
10.1016/j.physe.2006.03.115
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The compressibility chi of dilute two-dimensional electron and hole gases in GaAs semiconductor structures has been studied in the ranges of the interaction parameter r(s) = 1-2.5 and r(s) = 10-30 for the electron and hole system, respectively. Nonmonotonic dependence of chi(-1) with an upturn at low carrier densities is observed. Despite the large difference in r(s) the behavior of chi(-1) in both systems can be accurately described by the theory of nonlinear screening of disorder by the carriers. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：240 / 243
页数：4
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