Structure and magnetic properties of RF sputtered Fe-N films

被引：19

作者：

Chen, YF ^{[1
]}

Jiang, EY

Li, ZQ

Mi, WB

Wu, P

Bai, HL

机构：

[1] Tianjin Univ, Inst Adv Mat Phys, Tianjin 300072, Peoples R China

[2] Tianjin Univ, Fac Sci, Tianjin 300072, Peoples R China

[3] Tianjin Univ, Key Lab Adv Ceram & Machining Technol, Tianjin 300072, Peoples R China

[4] Tianjin Univ, Minist Educ, Tianjin 300072, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2004年 / 37卷 / 10期

关键词：

D O I：

10.1088/0022-3727/37/10/003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fe-N films with 20 nm thick Fe underlayers were deposited on Si(I 00) substrates by RF magnetron sputtering, and their structure and magnetic properties were investigated. It was found that the optimum nitrogen partial pressure for alpha" phase formation is about 2 x 10(-4) Torr, and the saturation magnetization measured at room temperature of the Fe-N films deposited at this pressure is as high as 2179 emu cc(-1) which is much higher than that of pure iron. Film thickness dependence of the saturation magnetization shows that it initially increases with the increase in film thickness and reaches a maximum of similar to2179 emu cc(-1) in the thickness range of 300-570 nm, and decreases with a further increase in film thickness.

引用

页码：1429 / 1433

页数：5

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