Intense ionizing irradiation-induced atomic movement toward recrystallization in 4H-SiC

An ultrafast thermal spike within a time interval of a few pico-seconds generated by intense ionizing energy deposited using 100 MeV Ag ions is utilized to study the atomistic details of damage recovery in 4H-SiC. Sequential single ion irradiations were performed using 300 keV Ar and 100 MeV Ag in h0001i 4H-SiC to invoke swift heavy ion (SHI) beam induced epitaxial recrystallization in samples with different degrees of pre-damaged conditions. SHI irradiation was carried out at both room temperature and a low temperature of similar to 80 K. Lowtemperature irradiation was carried out to arrest thermal diffusion of defects and to isolate ionization-induced defect migration in 4H-SiC. Insights into the thermal spike generated by ionizing events in crystalline and amorphous regions at both the temperatures predict a SiC response to SHI. The results emphasize the role of different degrees of pre-damage induced physico-chemical conditions and irradiation temperatures against SHI-induced recrystallization as evaluated by Rutherford backscattering/channeling, Raman spectroscopy, and hard x-ray photoelectron spectroscopy. Understanding the dependence of ion-beam damage accumulation and their recovery on the inelastic to elastic energy loss ratio is important for the performance prediction of SiC intended for extreme environments such as space, defense, and nuclear radiation. We report substantial damage recovery even at a near liquid nitrogen temperature of similar to 80 K. The recovery gets impeded mainly by the formation of complex defects having homonuclear bonds. The results are explained in the framework of the inelastic thermal spike model, and the role of phonon in the damage recovery process is emphasized.