32 Gbit/s multimode fibre transmission using high-speed, low current density 850 nm VCSEL

被引：63

作者：

Westbergh, P. ^{[1
]}

Gustavsson, J. S. ^{[1
]}

Haglund, A. ^{[1
]}

Larsson, A. ^{[1
]}

Hopfer, F. ^{[2
,3
]}

Fiol, G. ^{[2
,3
]}

Bimberg, D. ^{[2
,3
]}

Joel, A. ^{[4
]}

机构：

[1] Chalmers, Photon Lab, Dept Microelect & Nanosci, SE-41296 Gothenburg, Sweden

[2] Tech Univ Berlin, Ctr NanoPhoton, D-10623 Berlin, Germany

[3] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[4] IQE Europe Ltd, Cardiff CF3 0LW, S Glam, Wales

来源：

ELECTRONICS LETTERS | 2009年 / 45卷 / 07期

关键词：

Indium alloys - Surface emitting lasers - Semiconducting indium gallium arsenide - Semiconductor alloys - Gallium alloys - Semiconductor quantum wells;

D O I：

10.1049/el.2009.0201

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Error free transmission over multimode fibre at data rates up to 32 Gbit/s at 25 degrees C and 25 Gbit/s at 85 degrees C using an oxide confined 850 nm VCSEL biased at a current density of 11-14 kA/cm(2) is demonstrated. The VCSEL is optimised for high-speed by reducing capacitance and self-heating and by using strained InGaAs quantum wells for high differential gain.

引用

页码：366 / 367

页数：2