Microstructure, Surface Morphology and Photoluminescence Properties of Al-Doped ZnO Thin Films Prepared by Plasma Focus Method

被引:4
作者
Hosseinnejad, Mohammad Taghi [1 ]
Ghoranneviss, Mahmood [1 ]
Hantehzadeh, Mohammad Reza [1 ]
Darabi, Elham [1 ]
机构
[1] Islamic Azad Univ, Sci & Res Branch, Plasma Phys Res Ctr, Tehran, Iran
关键词
Al-doped ZnO; Plasma focus; Thin film; Microstructure; Photoluminescence; ATOMIC LAYER DEPOSITION; SOL-GEL METHOD; OPTICAL-PROPERTIES; ROOM-TEMPERATURE; DEVICE; TRANSPARENT; PHOTODETECTOR; FABRICATION; ABLATION; VAPOR;
D O I
10.1007/s10904-016-0444-1
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
Al-doped ZnO (AZO), as one of the most promising transparent conducting oxide (TCO) materials, has now been widely utilized in thin film solar cells. In this research the optimization process of AZO thin films deposited by plasma focus device was carried out by investigation of its physical properties under different deposition conditions for its utilize as a front contact for the Cadmium Telluride (CdTe) based thin film solar cell applications. The effects of number of focus shots and angular position of substrate on the microstructure, surface morphology and photoluminescence properties of the thin films have been systematically studied. X-ray diffraction (XRD) study confirmed the polycrystalline nature of the all deposited AZO thin films. XRD analysis also revealed that crystal structure characteristics of obtained samples strongly depend on deposition conditions (number of shots and angular position). Scanning electron microscopy (SEM) and atomic force microscopy (AFM) analyses revealed the structure growth and enhancement of surface roughness, with increasing of focus shots or decreasing of angular position. From Photoluminescence (PL) emission spectra, the variations of structural defects and band gap energy for all the AZO thin films prepared under different deposition conditions were also discussed.
引用
收藏
页码:61 / 72
页数:12
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