Spin-Hall insulator

被引：262

作者：

Murakami, S ^{[1
]}

Nagaosa, N

Zhang, SC

机构：

[1] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan

[2] AIST, CERC, Tsukuba, Ibaraki 3058562, Japan

[3] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan

[4] Stanford Univ, Dept Phys, Stanford, CA 94305 USA

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 93卷 / 15期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.93.156804

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Recent theories predict dissipationless spin current induced by an electric field in doped semiconductors. Nevertheless, the charge current is still dissipative in these systems. In this work, we theoretically predict the dissipationless spin-Hall effect, without any accompanying charge current, in some classes of band insulators, including zero-gap semiconductors such as HgTe and narrow-gap semiconductors such as PbTe. This effect is similar to the quantum-Hall effect in that all the states below the gap contribute and there occurs no dissipation. However, the spin-Hall conductance is not quantized even in two dimensions. This is the first example of a nontrivial topological structure in a band insulator without any magnetic field.

引用

页码：156804 / 1

页数：4