Dynamic bias circuit of CMOS power amplifier sensing dissipated signals

被引：1
|
作者：
Oh, I. Y. [1 ]
Bang, J. H. [1 ]
Park, C. S. [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Intellectual RF Engn Ctr, Yuseong 305732, Deajeon, South Korea
来源：
ELECTRONICS LETTERS | 2009年 / 45卷 / 14期
关键词：
Average power - CMOS power amplifiers - Dynamic bias - High power level - Mobile WiMAX - Output power levels - Spurious emissions - WiMAX standards;
D O I：
10.1049/el.2009.1135
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A dynamic bias technology is proposed to meet the linearity standards at high-power levels and simultaneously reduce power consumption at low-power levels for mobile WiMAX terminal application. The dynamic bias circuit makes the bias operate the power amplifier (PA) dynamically as the output power level is increased. The fabricated PA complies with the spurious emission of WiMAX standards up to 20 dBm with improvement in average power usage efficiency by a factor of 5.21 over a fixed bias PA.
引用
收藏
页码：744 / 745
页数：2
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