Application of plane wave method to the calculation of electronic states of nano-structures

被引：56

作者：

Li Shu-Shen ^{[1
]}

Xia Jian-Bai ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2006年 / 23卷 / 07期

关键词：

D O I：

10.1088/0256-307X/23/7/066

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The electronic states of nano-structures are studied in the framework of effective-mass envelope-function theory using the plane wave basis. The barrier width and the number of plane waves are proposed to be 2.5 times the effective Bohr radius and 15(n), respectively, for n-dimensional nano-structures (n = 1,2,3). Our proposals can be widely applied in the design of various nano-structure devices.

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页码：1896 / 1899

页数：4

相关论文

共 14 条

[1]

BRADLEY AF, 1995, PHYS REV B, V52, P12241

[2] THE JUSTIFICATION FOR APPLYING THE EFFECTIVE-MASS APPROXIMATION TO MICROSTRUCTURES [J].

BURT, MG .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1992, 4 (32) :6651-6690

[3] Electronic structure of InAs/GaAs self-assembled quantum dots [J].

Cusack, MA ;

Briddon, PR ;

Jaros, M .

PHYSICAL REVIEW B, 1996, 54 (04) :R2300-R2303

[4] Prediction of an excitonic ground state in InAs/InSb quantum dots [J].

He, LX ;

Bester, G ;

Zunger, A .

PHYSICAL REVIEW LETTERS, 2005, 94 (01)

[5] The homeotic protein AGAMOUS controls microsporogenesis by regulation of SPOROCYTELESS [J].

Ito, T ;

Wellmer, F ;

Yu, H ;

Das, P ;

Ito, N ;

Alves-Ferreira, M ;

Riechmann, JL ;

Meyerowitz, EM .

NATURE, 2004, 430 (6997) :356-360

[6] Stability of the DX- center in GaAs quantum dots -: art. no. 185501 [J].

Li, JB ;

Wei, SH ;

Wang, LW .

PHYSICAL REVIEW LETTERS, 2005, 94 (18)

[7] Electronic structure of InP quantum rods: differences between wurtzite, zinc blende, and different orientations [J].

Li, JB ;

Wang, LW .

NANO LETTERS, 2004, 4 (01) :29-33

[8] Quantum-confined Stark effects of InAs/GaAs self-assembled quantum dot [J].

Li, SS ;

Xia, JB .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (12) :7171-7174

[9] Effective-mass theory for InAs/GaAs strained coupled quantum dots [J].

Li, SS ;

Xia, JB ;

Yuan, ZL ;

Xu, ZY ;

Ge, WK ;

Wang, XR ;

Wang, Y ;

Wang, J ;

Chang, LL .

PHYSICAL REVIEW B, 1996, 54 (16) :11575-11581

[10] Asymmetric quantum-confined Stark effects of hierarchical self-assembly of GaAs/AlxGa1-xAs quantum dots -: art. no. 043102 [J].

Li, SS ;

Xia, JB .

APPLIED PHYSICS LETTERS, 2005, 87 (04)