Surface Analysis of Chamber Coating Materials Exposed to CF4/O2 Plasma

被引:16
|
作者
Park, Seung Hyun [1 ]
Kim, Kyung Eon [1 ]
Hong, Sang Jeen [1 ]
机构
[1] Myongji Univ, Dept Elect Engn, Yonin 17058, South Korea
关键词
plasma resistance; inner chamber wall coating; coating materials; atmospheric plasma spraying; yttria;
D O I
10.3390/coatings11010105
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Coating the inner surfaces of high-powered plasma processing equipment has become crucial for reducing maintenance costs, process drift, and contaminants. The conventionally preferred alumina (Al2O3) coating has been replaced with yttria (Y2O3) due to the long-standing endurance achieved by fluorine-based etching; however, the continuous increase in radio frequency (RF) power necessitates the use of alternative coating materials to reduce process shift in a series of high-powered semiconductor manufacturing environments. In this study, we investigated the fluorine-based etching resistance of atmospheric pressure-sprayed alumina, yttria, yttrium aluminum garnet (YAG), and yttrium oxyfluoride (YOF). The prepared ceramic-coated samples were directly exposed to silicon oxide etching, and the surfaces of the plasma-exposed samples were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy. We found that an ideal coating material must demonstrate high plasma-induced structure distortion by the fluorine atom from the radical. For endurance to fluorine-based plasma exposure, the bonding structure with fluoride was shown to be more effective than oxide-based ceramics. Thus, fluoride-based ceramic materials can be promising candidates for chamber coating materials.
引用
收藏
页码:1 / 11
页数:11
相关论文
共 50 条
  • [1] Study on CF4/O2 plasma resistance of O-ring elastomer materials
    Goto, Tetsuya
    Obara, Shogo
    Shimizu, Tomoya
    Inagaki, Tsuyoshi
    Shirai, Yasuyuki
    Sugawa, Shigetoshi
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2020, 38 (01):
  • [2] ANALYSIS OF NONUNIFORMITIES IN THE PLASMA-ETCHING OF SILICON WITH CF4/O2
    KAO, AS
    STENGER, HG
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (03) : 954 - 960
  • [3] REDUCTION OF THERMAL FLOW OF POSITIVE PHOTORESIST PATTERNS EXPOSED TO CF4/O2 PLASMA
    ALLEN, R
    FOSTER, M
    YEN, YT
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : C232 - C232
  • [4] DIELECTRIC BEHAVIOR OF O2/CF4 PLASMA ETCHED POLYIMIDE EXPOSED TO HUMID ENVIRONMENTS
    WU, SY
    DENTON, DD
    DESOUZAMACHADO, R
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (02): : 291 - 300
  • [5] Etching of PES fabric by O2/CF4 plasma
    Aubrecht, L.
    Pichal, J.
    Spatenka, P.
    Vatuna, T.
    Martinkova, L.
    CZECHOSLOVAK JOURNAL OF PHYSICS, 2006, 56 : B1126 - B1131
  • [6] On the Control of Plasma Parameters and Active Species Kinetics in CF4 + O2 + Ar Gas Mixture by CF4/O2 and O2/Ar Mixing Ratios
    Efremov, Alexander
    Lee, Junmyung
    Kim, Jihun
    PLASMA CHEMISTRY AND PLASMA PROCESSING, 2017, 37 (05) : 1445 - 1462
  • [7] Plasma parameters and active species kinetics in CF4/O2/Ar gas mixture: Effects of CF4/O2 and O2/Ar mixing ratios
    Lee, Junmyung
    Kwon, Kwang-Ho
    Efremov, A.
    INTERNATIONAL CONFERENCE ON MICRO- AND NANO-ELECTRONICS 2016, 2016, 10224
  • [8] On the Control of Plasma Parameters and Active Species Kinetics in CF4 + O2 + Ar Gas Mixture by CF4/O2 and O2/Ar Mixing Ratios
    Alexander Efremov
    Junmyung Lee
    Jihun Kim
    Plasma Chemistry and Plasma Processing, 2017, 37 : 1445 - 1462
  • [9] PLASMA-ETCHING OF NIOBIUM WITH CF4/O2 GASES
    CHEN, MM
    WANG, RH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 708 - 711
  • [10] Uranium dioxide reaction in CF4/O2 RF plasma
    Kim, Yong-Soo
    Min, Jin-Young
    Bae, Ki-Kwang
    Yang, Myung-Seung
    Journal of Nuclear Materials, 1999, 270 (01): : 253 - 258