A 40 GHz VCO with 9 to 15% tuning range in 0.13μm SOICMOS

被引：20

作者：

Fong, N ^{[1
]}

Plouchart, JO ^{[1
]}

Zamdmer, N ^{[1
]}

Liu, DX ^{[1
]}

Wagner, L ^{[1
]}

Plett, C ^{[1
]}

Tarr, G ^{[1
]}

机构：

[1] Carleton Univ, Dept Elect, Ottawa, ON K1S 5B6, Canada

来源：

2002 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS | 2002年

关键词：

D O I：

10.1109/VLSIC.2002.1015080

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A 40 GHz fully-monolithic complementary VCO fabricated in IBM 0.13 mum partially-depleted SOI CMOS technology is reported. The VCO operates at 1.5 V supply and draws 11.25 mW of power. The measured phase noise at 40 GHz is -109 dBc/Hz at 4 MHz offset from the carrier. At 1.5 V and 2 V V-DD, the tuning range is 9% and 15% respectively, and the output power is -8 dBm and -5 dBm respectively. The VCO occupies a chip area of only 100 mum by 100 mum.

引用

页码：186 / 189

页数：4

共 50 条

[1] A low-voltage multi-GHz VCO with 58% tuning range in SOICMOS
Fong, N
Plouchart, JO
Zamdmer, N
Liu, D
Wagner, L
Plett, C
Tarr, G
PROCEEDINGS OF THE IEEE 2002 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2002, : 423 - 426
[2] A 5 GHz 11-Stage CML VCO with 40% Frequency Tuning in 0.13μm SOI CMOS
Kim, Daeik D.
Cho, Choongyeun
Kim, Jonghae
2009 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUTS IN RF SYSTEMS, DIGEST OF PAPERS, 2009, : 65 - +
[3] A 70GHz VCO with 8GHz Tuning Range in 0.13um CMOS Technology
Liu, Zongru
Skafidas, Efstratios
Evans, Rob
2008 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2008, : 302 - 305
[4] A low-voltage 40-GHz complementary VCO with 15% frequency tuning range in SOOCMOS technology
Fong, N
Kim, J
Plouchart, JO
Zamdmer, N
Liu, DX
Wagner, L
Plett, C
Tarr, G
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2004, 39 (05) : 841 - 846
[5] A 20GHz VCO with 5GHz tuning range in 0.25μm SiGeBiCMOS
Jung, B
Harjani, R
2004 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE, DIGEST OF TECHNICAL PAPERS, 2004, 47 : 178 - 179
[6] 10 GHz VCO for 0.13μm CMOS Sonet CDR
Titus, Ward S.
Kenney, John G.
2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, 2006, : 345 - 348
[7] 10 GHz VCO for 0.13 μm CMOS Sonet CDR
Titus, Ward S.
Kenney, John G.
2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2006, : 389 - +
[8] A 0. 18 μM CMOS 2.45 GHz low-power quadrature VCO with 15% tuning range
Leenaerts, D
Dijkmans, C
Thompson, M
2002 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2002, : 67 - 70
[9] A Wideband 60 GHz VCO with Linear Tuning Range
Zou, Qiong
Ma, Kaixue
Yeo, Kiat Seng
2014 XXXITH URSI GENERAL ASSEMBLY AND SCIENTIFIC SYMPOSIUM (URSI GASS), 2014,
[10] 40-45 GHz High-IF Stage for Extremely Wide Tuning Range Receivers in 0.13 μm SiGe BiCMOS
Abdeen, Hebat-Allah Yehia
Yuan, Shuai
Schumacher, Hermann
Ziegler, Volker
Meusling, Askold
2017 12TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2017, : 53 - 56

← 1 2 3 4 5 →