On the incorporation mechanism of Fe in GaN grown by metal-organic vapour phase epitaxy

被引：30

作者：

Balmer, R. S. ^{[1
]}

Soley, D. E. J. ^{[1
]}

Simons, A. J. ^{[1
]}

Mace, J. D. ^{[1
]}

Koker, L. ^{[1
]}

Jackson, P. O. ^{[1
]}

Wallis, D. J. ^{[1
]}

Uren, M. J. ^{[1
]}

Martin, T. ^{[1
]}

机构：

[1] QinetiQ Ltd, Malvern Technol Ctr, St Andrews Rd, Malvern WR14 3PS, Worcs, England

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 | 2006年 / 3卷 / 06期

关键词：

D O I：

10.1002/pssc.200565282

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report an investigation of the incorporation mechanism of iron (Fe) as a dopant in GaN grown by MOVPE. A series of Fe doped GaN structures were studied by secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM) and X-ray photo-electron spectroscopy (XPS). A model is presented which describes the SIMS concentration profiles with excellent agreement, and, it is shown that Fe incorporation into GaN occurs via a surface segregation mechanism. This model is supported by direct measurement of a highly Fe-rich layer on the surface of Fe doped GaN by XPS. Furthermore, we find that the presence of Fe on the GaN surface promotes a transition from 2D to 3D GaN growth which is confirmed by AFM measurements of RMS roughness with increasing Fe flux. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1429 / 1434

页数：6

共 23 条

[11] Molecular beam epitaxy of wurtzite GaN-based magnetic alloy semiconductors [J].

Kuwabara, S ;

Kondo, T ;

Chikyow, T ;

Ahmet, P ;

Munekata, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (7B) :L724-L727

[12] GROWTH OF FE-DOPED SEMI-INSULATING INP BY MOCVD [J].

LONG, JA ;

RIGGS, VG ;

JOHNSTON, WD .

JOURNAL OF CRYSTAL GROWTH, 1984, 69 (01) :10-14

[13] AN INVESTIGATION ON HYDRIDE VPE GROWTH AND PROPERTIES OF SEMI-INSULATING INP-FE [J].

LOURDUDOSS, S ;

HAMMARLUND, B ;

KJEBON, O .

JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (09) :981-987

[14]

NESMEYANOV AN, 1963, VAPOUR PRESSURE ELEM, P380

[15] Properties of Fe-doped semi-insulating GaN structures [J].

Polyakov, AY ;

Smirnov, NB ;

Govorkov, AV ;

Pearton, SJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (01) :120-125

[16]

Stringfellow G. B., 1999, ORGANOMETALLIC VAPOR, P75

[17] PLANAR SURFACE BURIED-HETEROSTRUCTURE INGAASP/INP LASERS WITH HYDRIDE VPE-GROWN FE-DOPED HIGHLY RESISTIVE CURRENT-BLOCKING LAYERS [J].

SUGOU, S ;

KATO, Y ;

NISHIMOTO, H ;

KASAHARA, K .

ELECTRONICS LETTERS, 1986, 22 (23) :1214-1215

[18]

TANAKA K, 1988, J ELECTROCHEM SOC, V135, pC452

[19] Characteristics of semi-insulating, Fe-doped GaN substrates [J].

Vaudo, RP ;

Xu, XP ;

Salant, A ;

Malcarne, J ;

Brandes, GR .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2003, 200 (01) :18-21

[20] Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy [J].

Webb, JB ;

Tang, H ;

Rolfe, S ;

Bardwell, JA .

APPLIED PHYSICS LETTERS, 1999, 75 (07) :953-955

← 1 2 3 →