On the incorporation mechanism of Fe in GaN grown by metal-organic vapour phase epitaxy

被引：30

作者：

Balmer, R. S. ^{[1
]}

Soley, D. E. J. ^{[1
]}

Simons, A. J. ^{[1
]}

Mace, J. D. ^{[1
]}

Koker, L. ^{[1
]}

Jackson, P. O. ^{[1
]}

Wallis, D. J. ^{[1
]}

Uren, M. J. ^{[1
]}

Martin, T. ^{[1
]}

机构：

[1] QinetiQ Ltd, Malvern Technol Ctr, St Andrews Rd, Malvern WR14 3PS, Worcs, England

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 | 2006年 / 3卷 / 06期

关键词：

D O I：

10.1002/pssc.200565282

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report an investigation of the incorporation mechanism of iron (Fe) as a dopant in GaN grown by MOVPE. A series of Fe doped GaN structures were studied by secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM) and X-ray photo-electron spectroscopy (XPS). A model is presented which describes the SIMS concentration profiles with excellent agreement, and, it is shown that Fe incorporation into GaN occurs via a surface segregation mechanism. This model is supported by direct measurement of a highly Fe-rich layer on the surface of Fe doped GaN by XPS. Furthermore, we find that the presence of Fe on the GaN surface promotes a transition from 2D to 3D GaN growth which is confirmed by AFM measurements of RMS roughness with increasing Fe flux. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1429 / 1434

页数：6

共 23 条

[1] LEC GROWTH OF LARGE INP SINGLE-CRYSTALS [J].

ANTYPAS, GA .

JOURNAL OF CRYSTAL GROWTH, 1976, 33 (01) :174-176

[2] Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE [J].

Bougrioua, Z ;

Azize, M ;

Lorenzini, P ;

Laügt, M ;

Haas, H .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (04) :536-544

[3] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1733-1735

[4] PRECIPITATION IN FE-DOPED SEMI-INSULATING INP EPITAXIAL LAYER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION (MOCVD) [J].

CHU, SNG ;

NAKAHARA, S ;

LONG, JA ;

RIGGS, VG ;

JOHNSTON, WD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) :2795-2798

[5] IRON DOPING IN GALLIUM-ARSENIDE BY MOLECULAR-BEAM EPITAXY [J].

COVINGTON, DW ;

COMAS, J ;

YU, PW .

APPLIED PHYSICS LETTERS, 1980, 37 (12) :1094-1096

[6] OMCVD OF TRANSITION-METALS AND THEIR SILICIDES USING METALLOCENES AND (DI) SILANE OR SILICON TETRA-BROMIDE [J].

DORMANS, GJM .

JOURNAL OF CRYSTAL GROWTH, 1991, 108 (3-4) :806-816

[7]

HARRIS JJ, 1984, APPL PHYS A-MATER, V33, P87, DOI 10.1007/BF00617613

[8] Growth and characteristics of Fe-doped GaN [J].

Heikman, S ;

Keller, S ;

Mates, T ;

DenBaars, SP ;

Mishra, UK .

JOURNAL OF CRYSTAL GROWTH, 2003, 248 :513-517

[9] Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition [J].

Heikman, S ;

Keller, S ;

DenBaars, SP ;

Mishra, UK .

APPLIED PHYSICS LETTERS, 2002, 81 (03) :439-441

[10] TWINNING AND IMPURITY SEGREGATION IN CR-DOPED AND FE-DOPED LEC INP [J].

HOLT, DB ;

SALVIATI, G .

JOURNAL OF CRYSTAL GROWTH, 1990, 100 (03) :497-507

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