Temperature dependence of the current generated in Si bulk

被引：54

作者：

Chilingarov, A. ^{[1
]}

机构：

[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

来源：

JOURNAL OF INSTRUMENTATION | 2013年 / 8卷

关键词：

Si microstrip and pad detectors; Radiation-hard detectors; Particle tracking detectors (Solid-state detectors); IRRADIATED SILICON DETECTORS; RADIATION-DAMAGE;

D O I：

10.1088/1748-0221/8/10/P10003

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The dependence of the current generated in silicon bulk is investigated both theoretically and experimentally. It is demonstrated to be compatible with I proportional to T(2)e(-1.21eV/2kT) expected for the generation via a level near the middle of the band gap.

引用

页数：23

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