Achieving Uniform Monolayer Transition Metal Dichalcogenides Film on Silicon Wafer via Silanization Treatment: A Typical Study on WS2

被引：81

作者：

Chen, Ying ^{[1
]}

Gan, Lin ^{[1
]}

Li, Huiqiao ^{[1
]}

Ma, Ying ^{[1
]}

Zhai, Tianyou ^{[1
]}

机构：

[1] HUST, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Peoples R China

来源：

ADVANCED MATERIALS | 2017年 / 29卷 / 07期

基金：

中国国家自然科学基金;

关键词：

LARGE-AREA SYNTHESIS; CHEMICAL-VAPOR-DEPOSITION; HIGH-QUALITY; OPTICAL-PROPERTIES; GROWTH; GRAPHENE; LAYER; SCALE; PHOTODETECTION; ULTRAVIOLET;

D O I：

10.1002/adma.201603550

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

[No abstract available]

引用

页数：6

共 54 条

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