NVMain 2.0: A User-Friendly Memory Simulator to Model (Non-) Volatile Memory Systems

被引:167
作者
Poremba, Matthew [1 ]
Zhang, Tao [1 ]
Xie, Yuan [1 ]
机构
[1] Penn State Univ, Dept Comp Sci & Engn, University Pk, PA 16802 USA
基金
美国国家科学基金会;
关键词
Memory architecture; random access memory; nonvolatile memory; phase change memory; SDRAM;
D O I
10.1109/LCA.2015.2402435
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
In this letter, a flexible memory simulator - NVMain 2.0, is introduced to help the community for modeling not only commodity DRAMs but also emerging memory technologies, such as die-stacked DRAM caches, non-volatile memories (e.g., STT-RAM, PCRAM, and ReRAM) including multi-level cells (MLC), and hybrid non-volatile plus DRAM memory systems. Compared to existing memory simulators, NVMain 2.0 features a flexible user interface with compelling simulation speed and the capability of providing sub-array-level parallelism, fine-grained refresh, MLC and data encoder modeling, and distributed energy profiling.
引用
收藏
页码:140 / 143
页数:4
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