Demonstration of high quality 4H-SiC epitaxy by using the two-step growth method

被引：2

作者：

Mitani, Yoichiro ^{[1
]}

Tomita, Nobuyuki ^{[1
]}

Hamano, Kenichi ^{[2
]}

Tarutani, Masayoshi ^{[2
]}

Tanaka, Takanori ^{[1
]}

Ohno, Akihito ^{[3
]}

Kuroiwa, Takeharu ^{[4
]}

Toyoda, Yoshihiko ^{[1
]}

Imaizumi, Masayuki ^{[2
]}

Sumitani, Hiroaki ^{[2
]}

Yamakawa, Satoshi ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, Adv Technol R&D Ctr, Himeji, Hyogo, Japan

[2] Mitsubishi Electr Corp, Power Device Works, Fukuoka, Japan

[3] Mitsubishi Electr Corp, High Frequency & Opt Device Works, Himeji, Hyogo, Japan

[4] Mitsubishi Electr Corp, Head Off, Tokyo, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷

关键词：

SiC; epitaxial growth; carrot defect; triangle defect; two-step growth method; CARROT DEFECT; LAYERS;

D O I：

10.4028/www.scientific.net/MSF.778-780.167

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A new growth method for considerably suppressing generation of carrot and triangle defects is presented. Based on the investigation for the surfaces before and after the epitaxial growth, it becomes clear that those defects were results from micrometer-scale SiC particles. For removing the particles, pre-flow of 112 at high temperature before the growth was very effective. The density of those defects strongly depends on the condition of the pre-flow and especially decreased at Tp=1575 degrees C and tp=180 sec.

引用

页码：167 / +

页数：2

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