A new secondary ion mass spectrometry (SIMS) system with high-intensity cluster ion source

被引：51

作者：

Matsuo, J ^{[1
]}

Okubo, C

Seki, T

Aoki, T

Toyoda, N

Yamada, I

机构：

[1] Kyoto Univ, Quantum Sci & Engn Ctr, Kyoto 6068501, Japan

[2] Himeji Inst Technol, Lab Adv Sci & Technol, Himeji, Hyogo 67122, Japan

[3] Collaborat Res Ctr Cluster Ion Beam Proc Technol, Osaka, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2004年 / 219卷

关键词：

D O I：

10.1016/j.nimb.2004.01.103

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Secondary ion mass spectrometry (SIMS) with gas cluster ion beams (GCIB) was investigated with experiments and molecular dynamics (MD) simulations. A new cluster SIMS system with high-intensity cluster ion source has been developed. Ar cluster ion beam with the average size of 2000 was utilized as a primary ion beam. The beam diameter is less than 1 mm at the target position, and a current density of 10 muA/cm(2) is obtained. The etch rate of Si with this current density is more than 20 nm/min, which is far beyond the etch rate in recent low energy SIMS system. The secondary ion intensity linearly increases with the acceleration voltage. A threshold voltage of a few keV for secondary ion emission was found. These results are consistent with previous sputtering experiments. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：463 / 467

页数：5

共 15 条

[1]

AKIZUKI M, 1995, NUCL INSTRUM METH B, V99, P225

[2] Molecular dynamics and Monte-Carlo simulation of sputtering and mixing by ion irradiation [J].

Aoki, T ;

Chiba, S ;

Matsuo, J ;

Yamada, I ;

Biersack, JP .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 180 :312-316

[3]

Fenner DB, 2000, MATER RES SOC SYMP P, V585, P27

[4] Development of a triplasmatron ion source for the generation of SF5+ and F- primary ion beams on an ion microscope secondary ion mass spectrometry instrument [J].

Gillen, G ;

King, RL ;

Chmara, F .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (03) :845-852

[5] Use of an SF5+ polyatomic primary ion beam for ultrashallow depth profiling on an ion microscope secondary ion mass spectroscopy instrument [J].

Gillen, G ;

Walker, M ;

Thompson, P ;

Bennett, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (01) :503-508

[6] Negative cesium sputter ion source for generating cluster primary ion beams for secondary ion mass spectrometry analysis [J].

Gillen, G ;

King, L ;

Freibaum, B ;

Lareau, R ;

Bennett, J ;

Chmara, F .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2001, 19 (02) :568-575

[7] A high performance 50nm PMOSFET using decaborane (B10H14) ion implantation and 2-step activation annealing process [J].

Goto, K ;

Matsuo, J ;

Tada, Y ;

Tanaka, T ;

Momiyama, Y ;

Sugii, T ;

Yamada, I .

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, :471-474

[8] Sputtering of elemental metals by Ar cluster ions [J].

Matsuo, J ;

Toyoda, N ;

Akizuki, M ;

Yamada, I .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 121 (1-4) :459-463

[9] Generation of the large current cluster ion beam [J].

Seki, T ;

Matsuo, J ;

Takaoka, GH ;

Yamada, I .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 206 :902-906

[10] COMPUTER-SIMULATION OF LOCAL ORDER IN CONDENSED PHASES OF SILICON [J].

STILLINGER, FH ;

WEBER, TA .

PHYSICAL REVIEW B, 1985, 31 (08) :5262-5271

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