Large-Area Synthesis of Monolayer and Few-Layer MoSe2 Films on SiO2 Substrates

被引:377
|
作者
Lu, Xin [1 ]
Utama, M. Iqbal Bakti [1 ]
Lin, Junhao [2 ,3 ]
Gong, Xue [1 ]
Zhang, Jun [1 ]
Zhao, Yanyuan [1 ]
Pantelides, Sokrates T. [2 ,3 ]
Wang, Jingxian [4 ]
Dong, Zhili [5 ]
Liu, Zheng [5 ,6 ]
Zhou, Wu [3 ]
Xiong, Qihua [1 ,6 ]
机构
[1] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore
[2] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA
[3] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA
[4] Nanyang Technol Univ, Interdiciplinary Grad Sch, Energy Res Inst NTU, Singapore 637141, Singapore
[5] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
[6] Nanyang Technol Univ, Sch Elect & Elect Engn, Nanoelect Ctr Excellence, NOVITAS, Singapore 639798, Singapore
基金
新加坡国家研究基金会;
关键词
molybdenum diselenide; monolayer; selenization; chemical vapor deposition; photoluminescence; Raman spectroscopy; VAPOR-PHASE GROWTH; VALLEY POLARIZATION; ATOMIC LAYERS; HIGH-QUALITY; THIN-LAYERS; PHOTOLUMINESCENCE; TRANSITION; GENERATION; NANOSHEETS; GRAPHENE;
D O I
10.1021/nl5000906
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We present successful synthesis of large area atomically thin MoSe2 films by selenization of MoO3 in a vapor transport chemical vapor deposition (CVD) system. The homogeneous thin film can reach an area of 1 x 1 cm(2) consisting primarily of monolayer and bilayer MoSe2 film. Scanning transmission electron microscopy (STEM) images reveal the highly crystalline nature of the thin film and the atomic structure of grain boundaries in monolayers. Raman and photoluminescence spectroscopy confirm the high quality of as-grown MoSe2 in optics, and electronic transport measurements highlight the potential applications of the sample in nanoelectronics.
引用
收藏
页码:2419 / 2425
页数:7
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