Probing negative differential resistance on Si(111)-√3 x √3-Ag surface with scanning tunneling microscopy

被引：5
|
作者：
Wang, Weihua [1 ]
Zhao, Aidi [1 ]
Wang, Bing [1 ]
Hou, J. G. [1 ]
机构：
[1] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 26期
关键词：
LEVEL; SPECTROSCOPY; MOLECULES;
D O I：
10.1063/1.3173821
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present our study on the Si (111)-root 3 x root 3-Ag surface using scanning tunneling microscopy/spectroscopy. The results reveal that the well defined localized surface-state bands S-2/S-3 in the surface with lightly doped Si substrate play an important role in electron transport. The relative wide space charge layer beneath the surface interplays with the localized surface states, thus leading to the effect of the negative differential resistance. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3173821]
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页数：3
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