Ultrahigh Tunneling-Magnetoresistance Ratios in Nitride-Based Perpendicular Magnetic Tunnel Junctions from First Principles

被引：27
作者：
Yang, Baishun [1 ,2 ]
Tao, Lingling [3 ]
Jiang, Leina [2 ]
Chen, Weizhao [2 ]
Tang, Ping [2 ]
Yan, Yu [1 ]
Han, Xiufeng [2 ]
机构：
[1] Jilin Univ, Dept Phys, Minist Educ, Key Lab Phys & Technol Adv Batteries, Changchun 130012, Jilin, Peoples R China
[2] Univ Chinese Acad Sci, Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[3] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA
来源：
PHYSICAL REVIEW APPLIED | 2018年 / 9卷 / 05期
基金：
中国国家自然科学基金;
关键词：
TOTAL-ENERGY CALCULATIONS; ROOM-TEMPERATURE; MGO; 1ST-PRINCIPLES; ANISOTROPY; FILMS; COFEB; FE; CO;
D O I：
10.1103/PhysRevApplied.9.054019
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a first-principles study of electronic structures, magnetic properties, and the tunneling-magnetoresistance (TMR) effect of a series of ferromagnetic nitride M4N (M = Fe, Co, Ni)-based magnetic tunnel junctions (MTJs). It is found that bulk Fe4N reveals a half-metal nature in terms of the Delta(1) state. A perpendicular magnetic anisotropy is observed in the periodic system Fe4N/MgO. In particular, the ultrahigh TMR ratio of over 24 000% is predicted in the Fe4N/MgO/Fe4N MTJ due to the interface resonance tunneling and relatively high transmission for states of other symmetry. Besides, the large TMR can be maintained with the change of atomic details at the interface, such as the order-disorder interface, the change of thickness of the MgO barrier, and different in-plane lattice constants of the MTJ. The physical origin of the TMR effect can be well understood by analyzing the band structure and transmission channel of bulk Fe4N as well as the transmission in momentum space of Fe4N/MgO/Fe4N. Our results suggest that the Fe4N/MgO/Fe4N MTJ is a benefit for spintronic applications.
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页数：10
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