Photocurrent study of molecular beam epitaxy GaAs grown at low temperature

被引：2

作者：

Hozhabri, N ^{[1
]}

Montoya, JC

Alavi, K

机构：

[1] Natl Semicond Corp, Arlington, TX 76017 USA

[2] Univ Texas, Dept Elect Engn, NSF Ctr Elect Mat Device & Syst, Arlington, TX 76019 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 05期

关键词：

D O I：

10.1063/1.372186

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photocurrent spectroscopy measurement has been utilized to study low temperature behavior of molecular beam epitaxy GaAs grown at low temperature. Photocurrent spectra of the as-grown sample show a dip near 50-60 meV below the conduction edge for sample temperatures of 18-275 K. The magnitude of this dip is observed to be temperature dependent and one possible explanation of this new phenomenon is the trapping of electrons by arsenic vacancies. An annealed sample does not show this feature at any sample temperature. (C) 2000 American Institute of Physics. [S0021-8979(00)04204-3].

引用

页码：2353 / 2356

页数：4

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