A simple design of flat hyperlens for lithography and imaging with half-pitch resolution down to 20 nm

被引:97
|
作者
Xiong, Yi [1 ]
Liu, Zhaowei [1 ]
Zhang, Xiang [1 ,2 ]
机构
[1] Univ Calif Berkeley, NSF, Nanoscale Sci & Engn Ctr NSEC, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
基金
美国国家科学基金会;
关键词
lenses; masks; optical fabrication; photolithography; OPTICAL HYPERLENS; TRANSFORMATION OPTICS; DIFFRACTION LIMIT; PHOTOLITHOGRAPHY; NANOLITHOGRAPHY; SUPERLENS; LIGHT;
D O I
10.1063/1.3141457
中图分类号
O59 [应用物理学];
学科分类号
摘要
We propose that a hyperlens can be used for photolithography to generate deep subwavelength arbitrary patterns from diffraction-limited masks. Numerical simulation shows that half-pitch resolution down to 20 nm is possible from a mask with 280 nm period at working wavelength 375 nm. We also extend the hyperlens projection concept from cylindrical interfaces to arbitrary interfaces. An example of a flat interface hyperlens is numerically demonstrated for lithography purposes.
引用
收藏
页数:3
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