High sensitivity vanadium-vanadium pentoxide-aluminium metal-insulator-metal diode

被引：4

作者：

Abdel-Rahman, Mohamed ^{[1
]}

Issa, Khaled ^{[2
]}

Zia, Muhammad F. ^{[3
]}

Alduraibi, Mohammad ^{[4
,5
]}

Siraj, Mohammad ^{[1
]}

Ragheb, Amr ^{[2
]}

Alshebeili, Saleh ^{[1
,2
]}

机构：

[1] King Saud Univ, Coll Engn, Elect Engn Dept, POB 800, Riyadh 11421, Saudi Arabia

[2] King Saud Univ, KACST Technol Innovat Ctr, Radio Frequency & Photon E Soc RFTONICS, Riyadh 11421, Saudi Arabia

[3] King Saud Univ, Prince Sultan Adv Technol Res Inst, POB 800, Riyadh 11421, Saudi Arabia

[4] King Saud Univ, Coll Sci, Dept Phys & Astron, POB 2455, Riyadh 11451, Saudi Arabia

[5] King Abdulaziz City Sci & Technol, Natl Ctr Appl Phys, Riyadh 11442, Saudi Arabia

来源：

MICRO & NANO LETTERS | 2018年 / 13卷 / 05期

关键词：

ANTENNA; DESIGN; PERFORMANCE; FABRICATION; JUNCTION; XPS; THZ;

D O I：

10.1049/mnl.2017.0728

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This work reports on the fabrication of an improved sensitivity metal-insulator-metal (MIM) diode. They devise an asymmetric structure diode that cascades vanadium, vanadium pentoxide, and aluminium (V-V2O5-Al) thin film layers. The MIM diode is fabricated using electron-beam lithography, sputter deposition and metal liftoff techniques. X-ray photoelectron spectroscopy analysis is performed to determine the phase composition of the V2O5 insulating thin film. Electrical characterisation of the fabricated V-V2O5-Al shows a clear high sensitivity at -316 mV that reaches -8.52 V-1 with a dynamic resistance of 5.024 k Omega.

引用

页码：680 / 683

页数：4

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