On the Pseudomorphic High Electron Mobility Transistors (PHEMTs) With a Low-Temperature Gate Approach

被引：8

作者：

Chen, Li-Yang ^{[1
]}

Chen, Huey-Ing ^{[2
]}

Cheng, Shiou-Ying ^{[3
]}

Chen, Tzu-Pin ^{[1
]}

Tsai, Tsung-Han ^{[1
]}

Liu, Yi-Jung ^{[1
]}

Huang, Yi-Wen ^{[1
]}

Huang, Chien-Chang ^{[1
]}

Liu, Wen-Chau ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan

[3] Natl Ilan Univ, Dept Elect Engn, Ilan 26041, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 04期

关键词：

Electroless plated (EP); enhancement-mode (E-mode); pseudomorphic high electron mobility transistor (PHEMT); ALGAAS/INGAAS PHEMTS; DEPLETION-MODE; HEMTS;

D O I：

10.1109/LED.2009.2014788

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The characteristics of AlGaAs/InGaAs/GaAs depletion-mode (D-mode) and enhancement-mode (E-mode) pseudomorphic high electron mobility transistors (PHEMTs) fabricated using an electroless-plated (EP) deposition approach are investigated. Under the low-temperature and low-energy conditions, the EP deposition approach can form a better metal-semiconductor interface. For the studied devices, with a 1 x 100 mu m(2) gate dimension, excellent characteristics of the maximum drain saturation current (168.9 mA/mm) and extrinsic transconductance (225.8 mS/mm) are obtained for the D-mode device. The corresponding values for the E-mode device are 152.5 mA/mm and 211.7 mS/mm, respectively. Moreover, the EP approach also has the advantages of easy operation and low cost.

引用

页码：325 / 327

页数：3

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