Anti-coherence based molecular electronics: XOR-gate response

被引:72
作者
Baer, R [1 ]
Neuhauser, D
机构
[1] Hebrew Univ Jerusalem, Inst Chem, IL-91904 Jerusalem, Israel
[2] Hebrew Univ Jerusalem, Lise Meitner Minerva Ctr Quantum Chem, IL-91904 Jerusalem, Israel
[3] Univ Calif Los Angeles, Dept Chem, Los Angeles, CA 90095 USA
基金
以色列科学基金会; 美国国家科学基金会;
关键词
D O I
10.1016/S0301-0104(02)00570-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We point out and simulate the possible utility of anti-coherence in molecular electronics. In ballistic transfer through a molecule with a large loop that fulfils a certain phase condition on the loop structure, the transfer would be anti-coherent. By applying one or two control voltages to the molecule, that modify the relative phase through the two parts of the loop, the transfer could be controlled, just like in FET or in XOR gates. The simulations use the absorbing-potential based flux-flux formulae with a Huckel-Hamiltonian in a Landauer formulation, and are numerically equivalent to a weighted time-dependent correlation function. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:353 / 362
页数:10
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