The development of 4H-SiC {03(3)over-bar8) wafers

被引：12

作者：

Nakayama, K

Miyanagi, Y

Shiomi, H

Nishino, S

Kimoto, T

Matsunami, H

机构：

[1] SIXCON Ltd, Kyoto 6150065, Japan

[2] Kyoto Inst Technol, Sakyo Ku, Kyoto 6068585, Japan

[3] Kyoto Univ, Sakyo Ku, Kyoto 6068501, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

4H-SiC; bulk crystals; CVD; epitaxy; sublimation;

D O I：

10.4028/www.scientific.net/MSF.389-393.123

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We prepared 4H-SiC{03-38} wafers by slicing the ingots grown in the <03-38> directions. We used seed crystals that were prepared by diagonally slicing the 4H-SiC{0001} ingots. We observed that defects, such as micropipes and stacking faults, propagated diagonally and no defects reached the front surface of the ingots. We conducted the epitaxial growth on 4H-SiC{03-38} substrates prepared by slicing the 4H-SiC{0001} ingots. We observed that the {03-38} epilayer exhibits a smooth surface.

引用

页码：123 / 126

页数：4