Out of plane anisotropic magnetoresistance and planar Hall effect in epitaxial film of La0.8Sr0.2MnO3

被引：7

作者：

Naftalis, Netanel ^{[1
]}

Haham, Noam ^{[1
]}

Hoffman, Jason ^{[2
]}

Marshall, Matthew S. J. ^{[2
]}

Ahn, C. H. ^{[2
]}

Klein, L. ^{[1
]}

机构：

[1] Bar Ilan Univ, Dept Phys, Nanomagnetism Res Ctr, Inst Nanotechnol & Adv Mat, IL-52900 Ramat Gan, Israel

[2] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 05期

基金：

美国国家科学基金会; 以色列科学基金会;

关键词：

Hall effect - Magnetoresistance - Strontium compounds - Anisotropy - Crystal orientation - Manganese compounds - Lanthanum compounds;

D O I：

10.1063/1.4863854

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study the anisotropic magnetoresistance and planar Hall effect of La0.8Sr0.2MnO3 when the field is rotated out of the film plane. We fit the data with a model, which consists of two independent contributions related to (a) the orientation of the magnetization relative to the crystal axes and (b) the orientation of the magnetization relative to the current. We find that the first contribution exhibits a two-fold symmetry, which cannot be explained by the angular dependence of the magnetization magnitude, suggesting an intrinsic source which reflects a deviation from cubic symmetry. (C) 2014 AIP Publishing LLC.

引用

页数：3

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