Effects of elastic strain and diffusion-limited aggregation on morphological instabilities in sputtered nitride thin films

被引:7
作者
Vasu, Kuraganti [1 ]
Krishna, Mamidipudi Ghanashyam [2 ,3 ]
Padmanabhan, Kuppuswamy Anantha [3 ,4 ]
机构
[1] Univ Hyderabad, Sch Engn Sci & Technol, Ctr Nanotechnol, Hyderabad 500046, Andhra Pradesh, India
[2] Univ Hyderabad, Sch Phys, Hyderabad 500046, Andhra Pradesh, India
[3] Univ Hyderabad, Ctr Nanotechnol, Hyderabad 500046, Andhra Pradesh, India
[4] Univ Hyderabad, Sch Engn Sci & Technol, Hyderabad 500046, Andhra Pradesh, India
关键词
SURFACE INSTABILITIES; SHAPE TRANSITION; GROWTH; STRESS; STABILITY; SUBSTRATE; ISLANDS; SI(100); MODEL;
D O I
10.1557/jmr.2014.221
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The nature of morphological instabilities in sputtered titanium and niobium nitride thin films grown on amorphous borosilicate glass and single-crystal Si (311) substrates is investigated. All the films were grown by RF magnetron sputtering at constant power and pressure but with thickness varying from 40 to 400 nm and substrate temperatures of 250-300 degrees C. The surfaces of the thin films can be divided into two areas: one in which the morphology is smooth with densely packed grains and the other in which there are morphological instabilities. A closer observation of the morphological instabilities reveals the coexistence of elastic strain-induced Asaro-Tiller-Grinfeld (ATG) type of instability and dendritic and snowflake structures due to diffusion-limited aggregation (DLA). The ATG instabilities extend over lengths of several tens of micrometers, whereas the DLA structures are confined to lengths of less than 10 mu m in the same film. At low thickness (40-100 nm) only the elastic strain-induced instabilities emerge. High growth rates and a thickness of 150 nm are required to cause DLA and coexistence of the two kinds of instabilities. It has also been found that crystallization is not a prerequisite for the formation of dendritic structures.
引用
收藏
页码:1711 / 1720
页数:10
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