Microstructures and dielectric properties of low permittivity SrCuSi4O10-Bi2O3 ceramics for LTCC applications

被引：10

作者：

Zhang, Ping ^{[1
,2
]}

Liao, Jianwen ^{[1
,2
]}

Zhao, Yonggui ^{[1
,2
]}

Xie, Hui ^{[1
,2
]}

Liu, Lu ^{[1
,2
]}

Xiao, Mi ^{[1
,2
]}

机构：

[1] Tianjin Univ, Minist Educ, Sch Elect & Informat Engn, Tianjin 300072, Peoples R China

[2] Tianjin Univ, Minist Educ, Key Lab Adv Ceram & Machining Technol, Tianjin 300072, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2017年 / 28卷 / 06期

基金：

中国国家自然科学基金;

关键词：

SINTERING BEHAVIOR; TEMPERATURE; ADDITIVES; DENSIFICATION;

D O I：

10.1007/s10854-016-6146-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the effect of Bi2O3 addition as a sintering aid to lower the sintering temperature of SrCuSi4O10 ceramics, as well as the sintering behavior, microstructure, phase evolution and dielectric properties of SrCuSi4O10 ceramics were investigated. The Bi2O3 addition significantly reduced the sintering temperature of SrCuSi4O10 ceramics from 1100 to 950 A degrees C. Small amount of Bi2O3 addition could promote the densification of SrCuSi4O10 ceramics. However, excessive Bi2O3 addition caused the abnormal grain growth, leading to deteriorate dielectric properties. The tau(epsilon) constantly shifted towards the positive direction with increasing the amount of Bi2O3 additions. The SrCuSi4O10 ceramics with 3.0 wt% Bi2O3 addition sintered at 950 A degrees C for 6 h showed excellent dielectric properties: epsilon(r) similar to 6.26, tan delta = 3.1 x 10(-3) and tau(epsilon) value of 122.90 ppm/degrees C.

引用

页码：4946 / 4950

页数：5

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