Simultaneous influence of hydrostatic pressure and temperature on binding energy of impurity doped quantum dots in presence of noise

We examine the modulation of binding energy (BE) of GaAs quantum dots (QDs) containing impurity under the combined influence of hydrostatic pressure (HP) and temperature (T). Moreover, the influence of Gaussian white noise has also been taken into account. In this context, profiles of BE obtained by the variation of a group of important parameters such as electric field, magnetic field, confinement potential, dopant location, dopant potential and aluminium concentration (for AlxGa1-xAs alloy QD) have also been explored. Progressive change of HP and T has prominent impact on BE profile. Introduction of noise turns out to enhance or diminish the BE depending upon the mode through which it is applied. By and large, the interplay between noise and HP and between noise and temperature appears to play anchoring role in designing the BE profile. The findings highlight remarkable role displayed by noise in engineering the BE of doped QD system under the joint influence of both T and HP. (C) 2016 Elsevier B.V. All rights reserved.