A novel approach to the epitaxial growth of CeO2 films on Si(111)

被引：15
|
作者：
Zarraga-Colina, J
Nix, RM
Weiss, H
机构：
[1] Univ London Queen Mary Coll, Dept Chem, London E1 4NS, England
[2] Otto Von Guericke Univ, Inst Chem, D-39106 Magdeburg, Germany
来源：
SURFACE SCIENCE | 2004年 / 563卷 / 1-3期
关键词：
X-ray photoelectron spectroscopy; low energy electron diffraction (LEED); epitaxy; single crystal epitaxy; silicon; halides; lanthanides;
D O I：
10.1016/j.susc.2004.06.156
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The growth of epitaxial cerium oxide films on CaF2(1 1 1)/Si(1 1 1) has been studied by XPS, UPS and LEED. Using CaF2 as an intermediate layer between the Si(1 1 1) substrate and cerium oxide, an ordered and fully-oxidised (1 1 1)-oriented CeO2 film was obtained from the very early stages of growth. The prepared CeO2/CaF2/Si(1 1 1) interfaces showed reasonable thermal stability when annealed in oxygen, although fluorine migration into the ceria was evident at high temperatures. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：L251 / L255
页数：5
相关论文
共 50 条
  • [31] Water Dissociation on CeO2(100) and CeO2(111) Thin Films
    Mullins, David R.
    Albrecht, Peter M.
    Chen, Tsung-Liang
    Calaza, Florencia C.
    Biegalski, Michael D.
    Christen, Hans M.
    Overbury, Steven H.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2012, 116 (36): : 19419 - 19428
  • [32] CeO2 epitaxial films by spray MOD
    Rousseau, B
    Phok, S
    Ortega, L
    Guibadj, N
    Wegelius, T
    Morlens, S
    Odier, P
    Weiss, F
    Eikmeyer, J
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2005, 25 (12) : 2185 - 2189
  • [33] Impact of microwave annealing on CeO2 thin films sputtered on (111) Si
    Toloshniak, T.
    Guhel, Y.
    Bernard, J.
    Besq, A.
    Marinel, S.
    Boudart, B.
    MATERIALS RESEARCH BULLETIN, 2015, 70 : 712 - 718
  • [34] Charge storage in CeO2/Si/CeO2/Si(111) structures by electrostatic force microscopy
    Jones, JT
    Bridger, PM
    Marsh, OJ
    McGill, TC
    APPLIED PHYSICS LETTERS, 1999, 75 (09) : 1326 - 1328
  • [35] Charge storage in CeO2/Si/CeO2/Si(111) structures by electrostatic force microscopy
    Jones, J.T.
    Bridger, P.M.
    Marsh, O.J.
    McGill, T.C.
    Applied Physics Letters, 75 (09):
  • [36] ROOM-TEMPERATURE EPITAXIAL-GROWTH OF CEO2 THIN-FILMS ON SI(111) SUBSTRATES FOR FABRICATION OF SHARP OXIDE/SILICON INTERFACE
    YOSHIMOTO, M
    SHIMOZONO, K
    MAEDA, T
    OHNISHI, T
    KUMAGAI, M
    CHIKYOW, T
    ISHIYAMA, O
    SHINOHARA, M
    KOINUMA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (6A): : L688 - L690
  • [37] Growth of epitaxial CeO2(111) film on Ru(0001) and its reduction by hydrogen
    Komeda, Tadahiro
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2015, 250
  • [38] Room-temperature epitaxial growth of CeO2(001) films on YSZ buffered Si(001) substrates
    Trtik, V
    Sanchez, F
    Aguiar, R
    Maniette, Y
    Ferrater, C
    Varela, M
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 67 (04): : 455 - 457
  • [39] Room-temperature epitaxial growth of CeO2(001) films on YSZ buffered Si(001) substrates
    Trtik, V.
    Sanchez, F.
    Aguiar, R.
    Maniette, Y.
    Ferrater, C.
    Varela, M.
    Applied Physics A: Materials Science and Processing, 1998, 67 (04): : 455 - 457
  • [40] Comment on:: "Epitaxial silicon grown on CeO2/Si(111) structure by molecular beam epitaxy"
    Paparazzo, E
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (01): : 296 - 298
12345