Impurity dependent semiconductor type of epitaxial CuFeO2 (111) thin films deposited by using a pulsed laser deposition

被引：30

作者：

Choi, Dong Hyeok ^{[1
]}

Moon, Seung Je ^{[1
]}

Hong, Jong Soo ^{[1
]}

An, Sung Yong ^{[2
]}

Shim, In-Bo ^{[1
]}

Kim, Chul Sung ^{[1
]}

机构：

[1] Kookmin Univ, Dept Phys, Seoul 136702, South Korea

[2] Samsung Electromech Co LTD, Corp R&D Inst, Gyunggi Do 443743, South Korea

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 14期

关键词：

CuFeO2 thin film; p-Type semiconductor; PLD;

D O I：

10.1016/j.tsf.2009.01.111

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have prepared CuFeO2 thin films successfully oriented to the (111) direction on amorphous glass substrates by PLD. The average grain size analyzed by SEM images is about 80-90 nm, and CuFeO2 grains are formed to the hexagonal flat shape which means CuFeO2 with the rhombohedral structure was hexagonally grown on the amorphous glass substrate. P-type conductivities are commonly governed by impurities of the amount of metallic Cu phase. However, it was found that the highly (111) oriented CuFeO2 film shows insulation properties and CuFe2O4 phase affects the change of the type of semiconductor from p-type to n-type. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：3987 / 3989

页数：3

共 14 条

[1] Preparation of delafossite CuFeO2 thin films by rf-sputtering on conventional glass substrate [J].