Degradation mechanisms of siloxane-based thermal interface materials under reliability stress conditions

被引：14

作者：

Dal, SLB ^{[1
]}

机构：

[1] Intel Technol Philippines Inc, Cavite 4107, Philippines

来源：

2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS | 2004年

关键词：

thermal interface material; siloxane; degradation; reliability stress;

D O I：

10.1109/RELPHY.2004.1315386

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the degradation behavior of siloxanes as thermal interface materials (TIM) in semiconductor packages. It tackles existing literature degradation studies on siloxane materials. It then presents the failure and material analysis findings and explains the degradation behavior of siloxane-based TIM when exposed to different reliability stresses such as: 1) bake at high temperature 2) moisture exposure and 3) temperature plus moisture exposure. A good correlation was established between known chemical reactions and analysis data after stress. With these data, a good understanding of the reliability performance of siloxanes as thermal interface material was established.

引用

页码：537 / 542

页数：6