Rapid thermal annealing: An efficient method to improve the electrical properties of tellurium compensated Interfacial Misfit GaSb/GaAs heterostructures

被引：6

作者：

Aziz, Mohsin ^{[1
]}

Felix, Jorlandio F. ^{[2
,3
]}

Jameel, Dler ^{[1
]}

Al Saqri, Noor ^{[1
]}

Al Mashary, Faisal S. ^{[1
]}

Alghamdi, Haifaa M. ^{[1
]}

Albalawi, Hind M. A. ^{[1
]}

Taylor, David ^{[1
]}

Henini, Mohamed ^{[1
]}

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham Nanotechnol & Nanosci Ctr, Nottingham NG7 2RD, England

[2] Univ Brasilia, Inst Fis, Nucleo Fis Aplicada, BR-70910900 Brasilia, DF, Brazil

[3] Univ Fed Vicosa, Dept Fis, BR-36570900 Vicosa, MG, Brazil

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2015年 / 88卷

关键词：

Rapid thermal annealing; Furnace annealing; IV; CV; DLTS; GASB;

D O I：

10.1016/j.spmi.2015.08.028

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of thermal annealing on Te compensated Interfacial Misfit GaSb/GaAs heterostructures is investigated by using two different thermal annealing procedures, namely rapid thermal annealing and furnace annealing. The electrical properties of the devices are studied by using Current Voltage, Capacitance Voltage and Deep Level Transient Spectroscopy techniques. It is observed that rapid thermal annealing treatment is superior in terms of improvement of the electrical characteristics compared to furnace annealing treatment. The lowest leakage current and defect concentration are obtained when rapid thermal annealing is employed. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：80 / 89

页数：10

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