Rapid thermal annealing: An efficient method to improve the electrical properties of tellurium compensated Interfacial Misfit GaSb/GaAs heterostructures

被引：6

作者：

Aziz, Mohsin ^{[1
]}

Felix, Jorlandio F. ^{[2
,3
]}

Jameel, Dler ^{[1
]}

Al Saqri, Noor ^{[1
]}

Al Mashary, Faisal S. ^{[1
]}

Alghamdi, Haifaa M. ^{[1
]}

Albalawi, Hind M. A. ^{[1
]}

Taylor, David ^{[1
]}

Henini, Mohamed ^{[1
]}

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham Nanotechnol & Nanosci Ctr, Nottingham NG7 2RD, England

[2] Univ Brasilia, Inst Fis, Nucleo Fis Aplicada, BR-70910900 Brasilia, DF, Brazil

[3] Univ Fed Vicosa, Dept Fis, BR-36570900 Vicosa, MG, Brazil

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2015年 / 88卷

关键词：

Rapid thermal annealing; Furnace annealing; IV; CV; DLTS; GASB;

D O I：

10.1016/j.spmi.2015.08.028

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of thermal annealing on Te compensated Interfacial Misfit GaSb/GaAs heterostructures is investigated by using two different thermal annealing procedures, namely rapid thermal annealing and furnace annealing. The electrical properties of the devices are studied by using Current Voltage, Capacitance Voltage and Deep Level Transient Spectroscopy techniques. It is observed that rapid thermal annealing treatment is superior in terms of improvement of the electrical characteristics compared to furnace annealing treatment. The lowest leakage current and defect concentration are obtained when rapid thermal annealing is employed. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：80 / 89

页数：10

共 13 条

[1] Effect of post-growth annealing treatment on interfacial misfit GaSb/GaAs heterostructures [J].

Aziz, M. ;

Mesli, A. ;

Felix, J. F. ;

Jameel, D. ;

Al Saqri, N. ;

Taylor, D. ;

Henini, M. .

JOURNAL OF CRYSTAL GROWTH, 2015, 424 :5-10

[2] Deep-level transient spectroscopy of interfacial states in "buffer-free" p-i-n GaSb/GaAs devices [J].

Aziz, Mohsin ;

Ferrandis, Philippe ;

Mesli, Abdelmadjid ;

Mari, Riaz Hussain ;

Felix, Jorlandio Francisco ;

Sellai, Azzouz ;

Jameel, Dler ;

Al Saqri, Noor ;

Khatab, Almontaser ;

Taylor, David ;

Henini, Mohamed .

JOURNAL OF APPLIED PHYSICS, 2013, 114 (13)

[3] Native defects and self-diffusion in GaSb [J].

Hakala, M ;

Puska, MJ ;

Nieminen, RM .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (08) :4988-4994

[4]

Jallipalli A., 2009, APPL PHYS LETT, V95

[5] Native point defects in GaSb [J].

Kujala, J. ;

Segercrantz, N. ;

Tuomisto, F. ;

Slotte, J. .

JOURNAL OF APPLIED PHYSICS, 2014, 116 (14)

[6] OBSERVATION OF DEEP LEVELS IN UNDOPED GASB GROWN BY MOLECULAR-BEAM EPITAXY [J].

KURAMOCHI, E ;

KONDO, N ;

TAKANASHI, Y ;

FUJIMOTO, M .

APPLIED PHYSICS LETTERS, 1993, 63 (19) :2664-2666

[7] MOLECULAR-BEAM EPITAXY OF GASB ALSB OPTICAL-DEVICE LAYERS ON SI(100) [J].

MALIK, RJ ;

VANDERZIEL, JP ;

LEVINE, BF ;

BETHEA, CG ;

WALKER, J .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (11) :3909-3911

[8] LOW-THRESHOLD GAINASSB/GAALASSB DOUBLE-HETEROSTRUCTURE LASERS GROWN BY LPE [J].

MOROSINI, MBZ ;

HERRERAPEREZ, JL ;

LOURAL, MSS ;

VONZUBEN, AAG ;

DASILVEIRA, ACF ;

PATEL, NB .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (06) :2103-2108

[9] 2 μm GaInAsSb/AlGaAsSb midinfrared laser grown digitally on GaSb by modulated-molecular beam epitaxy [J].

Mourad, C ;

Gianardi, D ;

Malloy, KJ ;

Kaspi, R .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (10) :5543-5546

[10] High-power 2.3-μm GaSb-based linear laser array [J].

Shterengas, L ;

Belenky, GL ;

Gourevitch, A ;

Donetsky, D ;

Kim, JG ;

Martinelli, RU ;

Westerfeld, D .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (10) :2218-2220

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