Effect of graphene on improved photosensitivity of MoS2-graphene composite based Schottky diode

被引：28

作者：

Halder, Soumi ^{[1
]}

Pal, Baishakhi ^{[1
]}

Dey, Arka ^{[1
,2
]}

Sil, Sayantan ^{[1
]}

Das, Pubali ^{[1
]}

Biswas, Animesh ^{[1
,3
]}

Ray, Partha Pratim ^{[1
]}

机构：

[1] Jadavpur Univ, Dept Phys, Kolkata 700032, India

[2] SN Bose Natl Ctr Basic Sci, Dept Condensed Matter Phys & Mat Sci, Block JD,Sec 3, Kolkata 700106, India

[3] Sreegopal Barterjee Coll, Mogra 712148, Hooghly, India

来源：

MATERIALS RESEARCH BULLETIN | 2019年 / 118卷

关键词：

Schottky barrier diode; MoS2; Current density-voltage; Photosensitivity; Charge transport phenomena; MOS2; NANOPARTICLES; NANOSHEETS;

D O I：

10.1016/j.materresbull.2019.110507

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, MoS2 and MoS2-Graphene (MGC) composite have been synthesized by hydrothermal process followed by their structural, optical and electrical characterization. The current density-voltage measurements have been performed at room temperature by fabricating Al/MoS2 and/or MGC/ITO configured sandwich structured metal-semiconductor (MS) thin film Schottky devices. Under light and dark conditions, various parameters of our synthesized material based devices like rectification ratio, series resistance, barrier height, etc. have been measured and compared between the two. All the measured electrical properties show improvement for the composite based diodes, noteworthy the photosensitivity which has been increased by almost 33 times, signifying its potential application in photosensitive devices.

引用

页数：8

共 24 条

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