The Franz-Keldysh effect and free carrier dispersion effect in germanium

被引：2

作者：

Zhang, Li ^{[1
]}

Wang, Qi ^{[1
]}

Wang, Xin ^{[1
]}

Quan, Haiyan ^{[1
]}

Chen, Zhanguo ^{[1
]}

Liu, Xiuhuan ^{[2
]}

Qiu, Lingying ^{[3
]}

Zhao, Jihong ^{[1
]}

Hou, Lixin ^{[4
]}

Gao, Yanjun ^{[1
]}

Jia, Gang ^{[1
]}

机构：

[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, 2699 Qianjin St, Changchun 130012, Jilin, Peoples R China

[2] Jilin Univ, Coll Commun Engn, 2699 Qianjin St, Changchun 130012, Jilin, Peoples R China

[3] Jilin Univ, State Key Lab Supramol Struct & Mat, Inst Theoret Chem, 2699 Qianjin St, Changchun 130012, Jilin, Peoples R China

[4] Jilin Agr Univ, Coll Informat Technol, 2888 Xincheng St, Changchun 130118, Jilin, Peoples R China

来源：

OPTIK | 2018年 / 159卷

关键词：

Electro-optical modulation; Franz-Keldysh effect; Free carrier dispersion effect; Germanium; INFRARED-ABSORPTION; OPTICAL-ABSORPTION; SILICON; MODULATOR; LIGHT;

D O I：

10.1016/j.ijleo.2018.01.068

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We calculated the changes of refractive index and absorption coefficient in Ge induced by the Franz-Keldysh (FK) effect and free carrier dispersion (FCD) effect, taking advantage of reported absorption spectra.The FK effect is weak near the indirect absorption edge of Ge. FCD effect can induce a much larger change of refractive index. In the wavelength range of 2-10 mu m, theoretical formulas about dependences of the changes of absorption coefficient and refractive index on the change of carrier concentrations are presented. In addition, FCD effects in N-type and P-type Ge are compared. (C) 2018 Elsevier GmbH. All rights reserved.

引用

页码：202 / 210

页数：9

共 30 条

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