Temperature Dependencies of Free-Carrier-Absorption Lifetime in Fluorescent 6H-SiC Layers

被引：5

作者：

Manolis, G. ^{[1
]}

Gulbinas, K. ^{[1
]}

Grivickas, V. ^{[1
]}

Jokubavicius, V. ^{[2
]}

Linnarsson, M. K. ^{[3
]}

Syvajarvi, M. ^{[2
]}

机构：

[1] Vilnius State Univ, Inst Appl Res, Sauletekio Av 10, LT-10223 Vilnius, Lithuania

[2] Linkoping Univ, Dept Phys Chem & Biol, Linkoping, Sweden

[3] Royal Inst Technol, Sch Informat & Commun Technol, S-16440 Kista, Sweden

来源：

EMRS 2013 SPRING MEETING, SYMPOSIUM G: ALTERNATIVE APPROACHES OF SIC AND RELATED WIDE BANDGAP MATERIALS IN LIGHT EMITTING AND SOLAR CELL APPLICATIONS | 2014年 / 56卷

关键词：

D O I：

10.1088/1757-899X/56/1/012006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The nonradiative decay of majority electrons has been studied over a wide temperature range from 80 K to 600 K using the time-resolved free-carrier-absorption (FCA) technique. At high injection level of the highly-luminescent N-B codoped 6H-SiC epilayer, we revealed three main relaxation components of injected free electrons over ps-to-ms time ranges. By means of temperature dependency, two components can be ascribed to thermal activation of holes from a shallow (200 meV) and a deep (500 meV) acceptor. The third one, which has a hundred. mu s-time scale, we attribute to minority hole recombination from the valance band into the electron trap (53 meV). This recombination channel seems to compete with the deep-acceptor (Boron) to-donor (Nitrogen) pair visible emission at and below 300 K.

引用

页数：4

共 50 条

[41] Deuterium incorporation in acceptor doped epitaxial layers of 6H-SiC
Linnarsson, MK
Janson, M
Schoner, A
Nordell, N
Karlsson, S
Svensson, BG
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 761 - 764
[42] Deuterium incorporation in acceptor doped epitaxial layers of 6H-SiC
Linnarsson, M.K.
Janson, M.
Schoner, A.
Nordell, N.
Karlsson, S.
Svensson, B.G.
Materials Science Forum, 1998, 264-268 (pt 2): : 761 - 764
[43] Temperature dependence of ultrafast carrier dynamics in intrinsic and nitrogen-doped 6H-SiC crystals
Gaofang Li
Zuanming Jin
Zhongyue Yue
Guohong Ma
Kai Jiang
Zhigao Hu
Applied Physics A, 2012, 109 : 643 - 648
[44] Amorphous domains in GaN layers grown on 6H-SiC by MBE
Vermaut, P
Potin, V
Ruterana, P
Hairie, A
Nouet, G
Salvador, A
Morkoc, H
NITRIDE SEMICONDUCTORS, 1998, 482 : 429 - 434
[45] Temperature dependence of ultrafast carrier dynamics in intrinsic and nitrogen-doped 6H-SiC crystals
Li, Gaofang
Jin, Zuanming
Yue, Zhongyue
Ma, Guohong
Jiang, Kai
Hu, Zhigao
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2012, 109 (03): : 643 - 648
[46] Temperature dependence of optical absorption coefficient of 4H-and 6H-SiC from room temperature to 300 °C
Watanabe, Naoki
Kimoto, Tsunenobu
Suda, Jun
JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (10)
[47] Calculated density of states and carrier concentration in 4H- and 6H-SiC
Persson, C.
Lindefelt, U.
Materials Science Forum, 1998, 264-268 (pt 1): : 275 - 278
[48] Calculated density of states and carrier concentration in 4H- and 6H-SiC
Persson, C
Lindefelt, U
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 275 - 278
[49] Step free surface heteroepitaxy of 3C-SiC layers on patterned 4H/6H-SiC mesas and cantilevers
Neudeck, PG
Powell, JA
Trunek, AJ
Spry, DJ
SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 169 - 174
[50] The stability of 6H-SiC MOS capacitors at high temperature
Yamada, N
Fuma, H
Tadano, H
SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 737 - 740

← 1 2 3 4 5 →