Temperature Dependencies of Free-Carrier-Absorption Lifetime in Fluorescent 6H-SiC Layers

被引：5

作者：

Manolis, G. ^{[1
]}

Gulbinas, K. ^{[1
]}

Grivickas, V. ^{[1
]}

Jokubavicius, V. ^{[2
]}

Linnarsson, M. K. ^{[3
]}

Syvajarvi, M. ^{[2
]}

机构：

[1] Vilnius State Univ, Inst Appl Res, Sauletekio Av 10, LT-10223 Vilnius, Lithuania

[2] Linkoping Univ, Dept Phys Chem & Biol, Linkoping, Sweden

[3] Royal Inst Technol, Sch Informat & Commun Technol, S-16440 Kista, Sweden

来源：

EMRS 2013 SPRING MEETING, SYMPOSIUM G: ALTERNATIVE APPROACHES OF SIC AND RELATED WIDE BANDGAP MATERIALS IN LIGHT EMITTING AND SOLAR CELL APPLICATIONS | 2014年 / 56卷

关键词：

D O I：

10.1088/1757-899X/56/1/012006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The nonradiative decay of majority electrons has been studied over a wide temperature range from 80 K to 600 K using the time-resolved free-carrier-absorption (FCA) technique. At high injection level of the highly-luminescent N-B codoped 6H-SiC epilayer, we revealed three main relaxation components of injected free electrons over ps-to-ms time ranges. By means of temperature dependency, two components can be ascribed to thermal activation of holes from a shallow (200 meV) and a deep (500 meV) acceptor. The third one, which has a hundred. mu s-time scale, we attribute to minority hole recombination from the valance band into the electron trap (53 meV). This recombination channel seems to compete with the deep-acceptor (Boron) to-donor (Nitrogen) pair visible emission at and below 300 K.

引用

页数：4

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